FJA4210OTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency :

30MHz

Max Collector Current :

10A

Height :

20.1mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Mount :

Through Hole

Collector Emitter Saturation Voltage :

-500mV

Mounting Type :

Through Hole

Number of Terminations :

3

Transistor Element Material :

SILICON

JESD-609 Code :

e3

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 3A 4V

Length :

15.8mm

Transition Frequency :

30MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-140V

Current - Collector Cutoff (Max) :

10μA ICBO

Collector Base Voltage (VCBO) :

-200V

Polarity/Channel Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

500mV @ 500mA, 5A

Package / Case :

TO-3P-3, SC-65-3

Transistor Application :

AMPLIFIER

Number of Elements :

1

Transistor Type :

PNP

Gain Bandwidth Product :

30MHz

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Width :

5mm

Emitter Base Voltage (VEBO) :

-6V

Factory Lead Time :

2 Weeks

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

140V

hFE Min :

50

Collector Emitter Voltage (VCEO) :

140V

Power Dissipation :

100W

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Packaging :

Tube

Weight :

6.401g

Current Rating :

-10A

Radiation Hardening :

No

Number of Pins :

3

Published :

2008

Max Power Dissipation :

100W

Terminal Finish :

Tin

Peak Reflow Temperature (Cel) :

260