FJA4313RTU
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- Mfr.Part #
- FJA4313RTU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS NPN 250V 17A TO3PN
- Stock
- 48,491
- In Stock ：
- 48,491
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 30MHz
- Collector Base Voltage (VCBO) :
- 250V
- Published :
- 2005
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 250V
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Package / Case :
- TO-3P-3, SC-65-3
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- 10A
- Max Power Dissipation :
- 130W
- Transistor Element Material :
- SILICON
- Weight :
- 6.401g
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 30MHz
- Collector Emitter Saturation Voltage :
- 400mV
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Power Dissipation :
- 130W
- Voltage - Rated DC :
- 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 55 @ 1A 5V
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Max Collector Current :
- 17A
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- NPN
- hFE Min :
- 55
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 250V
- Frequency :
- 30MHz
- Factory Lead Time :
- 6 Weeks
- Pbfree Code :
- yes
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Datasheets
- FJA4313RTU
NPN 150°C TJ 5μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3, SC-65-3 Tube Through Hole
FJA4313RTU Overview
In this device, the DC current gain is 55 @ 1A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 800mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 10A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.Single BJT transistor is possible for the collector current to fall as low as 17A volts at Single BJT transistors maximum.
FJA4313RTU Features
the DC current gain for this device is 55 @ 1A 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 30MHz
FJA4313RTU Applications
There are a lot of ON Semiconductor
FJA4313RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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