FJA4210RTU
- Mfr.Part #
- FJA4210RTU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS PNP 140V 10A TO3P
- Stock
- 10,300
- In Stock :
- 10,300
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 500mA, 5A
- Supplier Device Package :
- TO-3P
- Transistor Type :
- PNP
- Power - Max :
- 100W
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tube
- Voltage - Collector Emitter Breakdown (Max) :
- 140V
- Package / Case :
- TO-3P-3, SC-65-3
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Current - Collector (Ic) (Max) :
- 10A
- Frequency - Transition :
- 30MHz
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 3A 4V
- Datasheets
- FJA4210RTU

PNP 150°C TJ 10μA ICBO TO-3P-3, SC-65-3 Tube Through Hole
FJA4210RTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 3A 4V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 500mA, 5A.The product comes in the supplier device package of TO-3P.A 140V maximal voltage - Collector Emitter Breakdown is present in the device.
FJA4210RTU Features
the DC current gain for this device is 50 @ 3A 4V
the vce saturation(Max) is 500mV @ 500mA, 5A
the supplier device package of TO-3P
FJA4210RTU Applications
There are a lot of ON Semiconductor
FJA4210RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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