MJ11015
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- Mfr.Part #
- MJ11015
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 120V 30A TO3
- Stock
- 34,105
- In Stock ：
- 34,105
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Continuous Collector Current :
- 30A
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 2 Weeks
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 120V
- Pbfree Code :
- yes
- Max Collector Current :
- 30A
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 200W
- Package / Case :
- TO-204AA, TO-3
- Height :
- 8.51mm
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 120V
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~200°C TJ
- Width :
- 26.67mm
- Number of Pins :
- 2
- Collector Emitter Saturation Voltage :
- 3V
- Terminal Form :
- PIN/PEG
- Transistor Type :
- PNP - Darlington
- Radiation Hardening :
- No
- Transition Frequency :
- 4MHz
- Weight :
- 4.535924g
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 1mA
- Collector Base Voltage (VCBO) :
- 120V
- Voltage - Rated DC :
- -120V
- Number of Elements :
- 1
- Pin Count :
- 2
- Packaging :
- Tray
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 300mA, 30A
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 200W
- Length :
- 39.37mm
- hFE Min :
- 1000
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Frequency - Transition :
- 4MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 20A 5V
- Current Rating :
- -30A
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Polarity :
- PNP
- Surface Mount :
- No
- Datasheets
- MJ11015
PNP - Darlington -55°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Tray Through Hole
MJ11015G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 20A 5V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.When VCE saturation is 4V @ 300mA, 30A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 30A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -30A.In the part, the transition frequency is 4MHz.A maximum collector current of 30A volts can be achieved.
MJ11015G Features
the DC current gain for this device is 1000 @ 20A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 4V @ 300mA, 30A
the emitter base voltage is kept at 5V
the current rating of this device is -30A
a transition frequency of 4MHz
MJ11015G Applications
There are a lot of ON Semiconductor
MJ11015G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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