MJ11021
- Mfr.Part #
- MJ11021
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 250V 15A TO204
- Stock
- 9,505
- In Stock :
- 9,505
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 1mA
- Terminal Form :
- PIN/PEG
- Current Rating :
- -15A
- Surface Mount :
- No
- Length :
- 39.37mm
- Collector Base Voltage (VCBO) :
- 250V
- Package / Case :
- TO-204AA, TO-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Saturation Voltage :
- 2V
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Number of Pins :
- 2
- Power - Max :
- 175W
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 175W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 10A 5V
- Pin Count :
- 2
- Vce Saturation (Max) @ Ib, Ic :
- 3.4V @ 150mA, 15A
- Transistor Application :
- SWITCHING
- Height :
- 8.51mm
- Weight :
- 6.40101g
- Pbfree Code :
- yes
- Transition Frequency :
- 6MHz
- Operating Temperature :
- -65°C~200°C TJ
- Element Configuration :
- Single
- Number of Terminations :
- 2
- Voltage - Rated DC :
- -250V
- hFE Min :
- 100
- Packaging :
- Tray
- Transistor Type :
- PNP - Darlington
- Collector Emitter Voltage (VCEO) :
- 250V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 50V
- Power Dissipation :
- 150W
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Polarity :
- PNP
- Factory Lead Time :
- 2 Weeks
- JESD-609 Code :
- e3
- Width :
- 26.67mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 250V
- Published :
- 2005
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Max Collector Current :
- 15A
- Datasheets
- MJ11021

PNP - Darlington -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Tray Through Hole
MJ11021G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 400 @ 10A 5V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3.4V @ 150mA, 15A.If the emitter base voltage is kept at 50V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -15A.A transition frequency of 6MHz is present in the part.Collector current can be as low as 15A volts at its maximum.
MJ11021G Features
the DC current gain for this device is 400 @ 10A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3.4V @ 150mA, 15A
the emitter base voltage is kept at 50V
the current rating of this device is -15A
a transition frequency of 6MHz
MJ11021G Applications
There are a lot of ON Semiconductor
MJ11021G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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