MJ11016G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Weight :

4.535924g

Published :

2006

Collector Emitter Voltage (VCEO) :

120V

Pbfree Code :

yes

REACH SVHC :

No SVHC

Number of Pins :

2

Package / Case :

TO-204AA, TO-3

Current - Collector Cutoff (Max) :

1mA

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Case Connection :

COLLECTOR

Current Rating :

30A

Pin Count :

2

Width :

26.67mm

Transistor Application :

AMPLIFIER

Number of Elements :

1

Packaging :

Tray

Voltage - Rated DC :

120V

Transistor Type :

NPN - Darlington

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

30A

Vce Saturation (Max) @ Ib, Ic :

4V @ 300mA, 30A

Frequency - Transition :

4MHz

Length :

39.37mm

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Operating Temperature :

-55°C~200°C TJ

Number of Terminations :

2

Terminal Position :

BOTTOM

Emitter Base Voltage (VEBO) :

5V

Height :

8.51mm

Terminal Form :

PIN/PEG

ECCN Code :

EAR99

Power Dissipation :

200W

Continuous Collector Current :

30A

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 20A 5V

Time@Peak Reflow Temperature-Max (s) :

40

Collector Base Voltage (VCBO) :

120V

Factory Lead Time :

2 Weeks

Radiation Hardening :

No

Max Power Dissipation :

200W

Contact Plating :

Tin

Polarity :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

120V

JESD-609 Code :

e3

Element Configuration :

Single

Collector Emitter Saturation Voltage :

3V

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Surface Mount :

No

Transition Frequency :

4MHz