MJD31C1
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- Mfr.Part #
- MJD31C1
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A IPAK
- Stock
- 3,823
- In Stock ：
- 3,823
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 3MHz
- Width :
- 2.38mm
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Transition Frequency :
- 3MHz
- Collector Emitter Saturation Voltage :
- 1.2V
- Power Dissipation :
- 1.56W
- Frequency :
- 3MHz
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- MJD31
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 6.22mm
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Number of Pins :
- 4
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1.56W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- 100V
- hFE Min :
- 25
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Pin Count :
- 4
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Breakdown Voltage :
- 100V
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 100V
- Length :
- 6.73mm
- Surface Mount :
- No
- Number of Elements :
- 1
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 10V
- Contact Plating :
- Tin
- Factory Lead Time :
- 8 Weeks
- Published :
- 2005
- JESD-30 Code :
- R-PSIP-T3
- Current Rating :
- 3A
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 50μA
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -65°C~150°C TJ
- Mounting Type :
- Through Hole
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Max Collector Current :
- 3A
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- MJD31C1
NPN -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
MJD31C1G Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJD31C1G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31C1G Applications
There are a lot of ON Semiconductor
MJD31C1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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