MJD31C

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

50μA

Lifecycle Status :

ACTIVE (Last Updated: 4 hours ago)

Power Dissipation :

1.56W

Height :

2.3876mm

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

hFE Min :

25

Factory Lead Time :

8 Weeks

Collector Emitter Saturation Voltage :

1.2V

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Pbfree Code :

yes

Max Collector Current :

3A

Voltage - Rated DC :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

Transition Frequency :

3MHz

Width :

6.223mm

Frequency :

3MHz

ECCN Code :

EAR99

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

5V

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

NPN

Operating Temperature :

-65°C~150°C TJ

Pin Count :

3

Max Power Dissipation :

1.56W

Current Rating :

3A

Terminal Form :

Gull wing

Gain Bandwidth Product :

3MHz

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Number of Elements :

1

Packaging :

Tube

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Collector Emitter Voltage (VCEO) :

100V

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Radiation Hardening :

No

REACH SVHC :

No SVHC

Case Connection :

COLLECTOR

Base Part Number :

MJD31

Number of Pins :

3

Collector Base Voltage (VCBO) :

100V

Number of Terminations :

2

Transistor Type :

NPN

Collector Emitter Breakdown Voltage :

100V

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Length :

6.7056mm

Transistor Element Material :

SILICON

JESD-609 Code :

e3