MJD3055G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

40

Polarity/Channel Type :

NPN

Max Collector Current :

10A

Case Connection :

COLLECTOR

Transistor Type :

NPN

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Element Configuration :

Single

Packaging :

Tube

Pin Count :

3

Collector Emitter Voltage (VCEO) :

60V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Frequency :

2MHz

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Vce Saturation (Max) @ Ib, Ic :

8V @ 3.3A, 10A

Current - Collector Cutoff (Max) :

50μA

Base Part Number :

MJD3055

Gain Bandwidth Product :

2MHz

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Published :

2002

Current Rating :

10A

Voltage - Rated DC :

60V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Number of Terminations :

2

Height :

2.38mm

Power Dissipation :

1.75W

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Width :

6.22mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Surface Mount :

yes

Transition Frequency :

2MHz

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Collector Emitter Saturation Voltage :

1.1V

Number of Pins :

3

hFE Min :

20

REACH SVHC :

No SVHC

Collector Base Voltage (VCBO) :

70V

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

60V

Pbfree Code :

yes

Radiation Hardening :

No

ECCN Code :

EAR99

Weight :

4.535924g

Length :

6.73mm

Max Power Dissipation :

1.75W

Emitter Base Voltage (VEBO) :

5V