MJD3055TF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

150°C TJ

Number of Elements :

1

Max Breakdown Voltage :

60V

Current Rating :

10A

Number of Pins :

3

Width :

6.1mm

Gain Bandwidth Product :

2MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.6mm

Voltage - Rated DC :

60V

Published :

2001

Height :

2.3mm

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

50μA

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Frequency :

2MHz

Power Dissipation :

1.75W

Transistor Element Material :

SILICON

Element Configuration :

Single

Weight :

260.37mg

Vce Saturation (Max) @ Ib, Ic :

8V @ 3.3A, 10A

Transistor Type :

NPN

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

Transition Frequency :

2MHz

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Max Collector Current :

10A

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

60V

Packaging :

Tape and Reel (TR)

Base Part Number :

MJD3055

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Voltage (VCEO) :

60V

Radiation Hardening :

No

Number of Terminations :

2

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Collector Base Voltage (VCBO) :

70V

Collector Emitter Saturation Voltage :

1.1V

REACH SVHC :

No SVHC

hFE Min :

20

Mount :

Surface Mount

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 5 days ago)

Max Power Dissipation :

1.75W

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

14 Weeks