MS1001

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Max Power Dissipation :

270W

Transistor Application :

AMPLIFIER

Frequency - Transition :

30MHz

Terminal Position :

Radial

Polarity/Channel Type :

NPN

JESD-609 Code :

e0

RoHS Status :

RoHS Compliant

Gain :

13dB

Published :

2003

Pbfree Code :

No

Configuration :

Single

Power - Max :

270W

Mounting Type :

Chassis Mount

Number of Elements :

1

Package / Case :

M174

Number of Terminations :

4

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Pin Count :

4

Collector Base Voltage (VCBO) :

36V

Radiation Hardening :

No

Number of Pins :

4

Collector Emitter Voltage (VCEO) :

18V

Additional Feature :

WITH DIFFUSED EMITTER RESISTORS

Terminal Form :

Flat

Operating Temperature :

200°C TJ

Collector Emitter Breakdown Voltage :

18V

Transistor Type :

NPN

Max Collector Current :

20A

Packaging :

Bulk

Mount :

Chassis Mount, Screw

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 5A 5V

Highest Frequency Band :

HIGH FREQUENCY B

Terminal Finish :

TIN LEAD