MS1008

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Polarity/Channel Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

55V

Current - Collector (Ic) (Max) :

10A

Terminal Finish :

TIN LEAD

Operating Temperature :

200°C TJ

Collector-Base Capacitance-Max :

220pF

Power - Max :

233W

Frequency - Transition :

30MHz

Published :

2003

JESD-609 Code :

e0

Package / Case :

M164

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Type :

NPN

Highest Frequency Band :

VERY HIGH FREQUENCY B

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 1.4A 6V

Number of Elements :

1

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Packaging :

Bulk

Mounting Type :

Chassis Mount

Configuration :

Single

Pbfree Code :

No

JESD-30 Code :

O-PRPM-F4

Transistor Application :

AMPLIFIER

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

WITH EMITTER BALLASTING RESISTORS

ECCN Code :

EAR99

Reach Compliance Code :

Compliant

Gain :

14dB

Number of Terminations :

4

Surface Mount :

No

Terminal Position :

Radial

Qualification Status :

Not Qualified