MS1004

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Package / Case :

M177

Power - Max :

330W

Peak Non-Repetitive Surge Current :

225A

Element Configuration :

Common Cathode

Forward Current :

10A

Collector Emitter Breakdown Voltage :

55V

Lifecycle Status :

Obsolete (Last Updated: 1 month ago)

Number of Terminations :

4

Gain :

14.5dB

JESD-609 Code :

e0

Mount :

Chassis Mount, Through Hole

Terminal Finish :

TIN LEAD

Published :

2003

Radiation Hardening :

No

Pin Count :

3

Terminal Form :

Flat

Number of Elements :

1

Mounting Type :

Chassis Mount

Polarity/Channel Type :

NPN

Transistor Type :

NPN

Packaging :

Bulk

Max Repetitive Reverse Voltage (Vrrm) :

40V

Pbfree Code :

No

Additional Feature :

High Reliability

Highest Frequency Band :

VERY HIGH FREQUENCY B

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 10A 6V

JESD-30 Code :

O-PRFM-F4

Peak Reverse Current :

250μA

Max Power Dissipation :

330W

Collector-Base Capacitance-Max :

360pF

Frequency - Transition :

30MHz

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Terminal Position :

Radial

Max Collector Current :

40A

Operating Temperature :

200°C TJ