MS1006

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Frequency - Transition :

30MHz

Case Connection :

CATHODE

Diode Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOW POWER LOSS, REVERSE ENERGY TESTED

Operating Temperature :

200°C

Packaging :

Bulk

Pbfree Code :

yes

Diode Type :

RECTIFIER DIODE

HTS Code :

8541.10.00.80

Qualification Status :

Not Qualified

Non-rep Pk Forward Current-Max :

225A

Output Current-Max :

10A

Forward Voltage-Max :

0.67V

ECCN Code :

EAR99

Reverse Current-Max :

250μA

Configuration :

Single

Package / Case :

M135

Terminal Form :

THROUGH-HOLE

Number of Elements :

1

Power - Max :

127W

Voltage - Collector Emitter Breakdown (Max) :

55V

RoHS Status :

RoHS Compliant

Mounting Type :

Stud Mount

Reach Compliance Code :

Compliant

Terminal Position :

Single

Number of Phases :

1

JEDEC-95 Code :

TO-220

Gain :

14dB

Transistor Type :

NPN

Rep Pk Reverse Voltage-Max :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T2

Surface Mount :

No

Application :

EFFICIENCY

Current - Collector (Ic) (Max) :

3.25A

Pin Count :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

19 @ 1.4A 6V