NSS12100M3T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

410mV @ 100mA, 1A

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

100nA ICBO

ECCN Code :

EAR99

Package / Case :

SOT-723

Radiation Hardening :

No

Number of Elements :

1

Width :

850μm

Polarity/Channel Type :

PNP

Base Part Number :

NSS12100

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 500mA 2V

Collector Emitter Saturation Voltage :

-35mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

550μm

hFE Min :

80

Length :

1.25mm

Collector Emitter Breakdown Voltage :

12V

Number of Pins :

3

Factory Lead Time :

4 Weeks

Max Collector Current :

1A

Number of Terminations :

3

Halogen Free :

Halogen Free

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

625mW

Collector Emitter Voltage (VCEO) :

12V

Max Breakdown Voltage :

12V

REACH SVHC :

No SVHC

Max Power Dissipation :

625mW

Pin Count :

3

Published :

2005

Element Configuration :

Single

Pbfree Code :

yes

Transistor Type :

PNP

Terminal Form :

Flat

Collector Base Voltage (VCBO) :

12V

Contact Plating :

Tin

Terminal Position :

Dual

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

5V

Surface Mount :

yes