NSS1C201LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Frequency :

110MHz

Contact Plating :

Tin

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 500mA 2V

Element Configuration :

Single

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

NPN

Number of Elements :

1

Base Part Number :

NSS1C201

Number of Terminations :

3

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

7V

Number of Pins :

3

Power Dissipation :

710mW

Pin Count :

3

Collector Base Voltage (VCBO) :

140V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Halogen Free :

Halogen Free

Radiation Hardening :

No

Height :

1.11mm

Collector Emitter Saturation Voltage :

150mV

Pbfree Code :

yes

JESD-609 Code :

e3

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

100V

ECCN Code :

EAR99

Length :

3.04mm

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Type :

NPN

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

150mV @ 200mA, 2A

Published :

2008

Current - Collector (Ic) (Max) :

2A

Lead Free :

Lead Free

Max Power Dissipation :

490mW

Gain Bandwidth Product :

110MHz

hFE Min :

40

Terminal Position :

Dual

Factory Lead Time :

8 Weeks

Max Collector Current :

3A

Width :

2.64mm

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

100V

Max Breakdown Voltage :

100V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transition Frequency :

110MHz