NSS12100UW3TCG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

1A

Emitter Base Voltage (VEBO) :

5V

Collector Base Voltage (VCBO) :

12V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Max Breakdown Voltage :

12V

Base Part Number :

NSS12100

JESD-609 Code :

e3

Power Dissipation :

1.1W

Lead Free :

Lead Free

Pin Count :

3

Collector Emitter Voltage (VCEO) :

12V

Transition Frequency :

200MHz

Factory Lead Time :

8 Weeks

Power - Max :

740mW

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2008

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

440mV @ 100mA, 1A

Halogen Free :

Halogen Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 2V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Package / Case :

3-WDFN Exposed Pad

Gain Bandwidth Product :

200MHz

Terminal Position :

Dual

ECCN Code :

EAR99

Transistor Type :

PNP

Surface Mount :

yes

Turn Off Time-Max (toff) :

240ns

Mounting Type :

Surface Mount

Number of Pins :

3

Element Configuration :

Single

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

12V

Max Power Dissipation :

1.1W

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

PNP

Frequency :

200MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Case Connection :

COLLECTOR

Transistor Application :

SWITCHING