NTE129

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

SWITCHING

Configuration :

Single

Frequency - Transition :

-

Pin Count :

3

Mounting Type :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA, 5V

Rad Hardened :

No

DC Current Gain-Min (hFE) :

90

Manufacturer :

NTE Electronics

Supplier Device Package :

TO-39

Package Shape :

Round

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max) :

80 V

Power Dissipation-Max (Abs) :

1 W

JESD-30 Code :

O-MBCY-W3

Collector Current-Max (IC) :

1 A

Package / Case :

TO-205AD, TO-39-3 Metal Can

Transistor Type :

PNP

Number of Elements :

1

Terminal Form :

Wire

Surface Mount :

No

Power - Max :

1.25 W

Frequency :

400(MHz)

Product Status :

Active

Operating Temp Range :

-65C to 200C

Series :

-

Package Type :

TO-39

Output Power :

Not Required(W)

Terminal Position :

BOTTOM

Operating Temperature Classification :

Military

DC Current Gain :

75

Mounting :

Through Hole

Power Dissipation :

1.25(W)

Subcategory :

Other Transistors

Category :

Bipolar Power

Transistor Polarity :

PNP

Emitter-Base Voltage :

5(V)

Operating Temperature :

-65°C ~ 200°C (TJ)

Collector-Base Voltage :

80(V)

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Number of Terminals :

3

Case Connection :

COLLECTOR

Reach Compliance Code :

Unknown

Package :

Bag

HTS Code :

8541.29.00.95

Current - Collector (Ic) (Max) :

1 A

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

JEDEC-95 Code :

TO-39

Current - Collector Cutoff (Max) :

50nA (ICBO)

Collector Current (DC) :

1(A)

Polarity/Channel Type :

PNP