NTE157

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Through Hole

Category :

Bipolar Power

Reach Compliance Code :

Unknown

Package Type :

TO-126

Number of Elements :

1

Emitter-Base Voltage :

6(V)

Frequency :

10(MHz)

Subcategory :

Other Transistors

DC Current Gain-Min (hFE) :

5

Number of Terminals :

3

DC Current Gain :

25

Package :

Bag

Transistor Type :

NPN

Operating Temperature Classification :

Military

Operating Temp Range :

-65C to 150C

Product Status :

Active

Package / Case :

TO-225AA, TO-126-3

JEDEC-95 Code :

TO-126

Collector-Base Voltage :

325(V)

Current - Collector (Ic) (Max) :

500 mA

Transistor Element Material :

SILICON

Power - Max :

20 W

Current - Collector Cutoff (Max) :

100μA

Series :

-

Pin Count :

3 +Tab

Rad Hardened :

No

Surface Mount :

No

Configuration :

Single

Manufacturer :

NTE Electronics

ECCN Code :

EAR99

Power Dissipation :

20(W)

Collector-Emitter Voltage-Max :

300 V

Supplier Device Package :

TO-126

Frequency - Transition :

10MHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Vce Saturation (Max) @ Ib, Ic :

10V @ 100mA, 500mA

Power Dissipation-Max (Abs) :

20 W

Power Dissipation Ambient-Max :

20 W

Transistor Application :

AMPLIFIER

Voltage - Collector Emitter Breakdown (Max) :

300 V

JESD-30 Code :

R-PSFM-W3

Polarity/Channel Type :

NPN

Operating Temperature :

-65°C ~ 150°C (TJ)

Collector Current-Max (IC) :

0.5 A

Transistor Polarity :

NPN

Mounting :

Through Hole

Terminal Form :

Wire

Terminal Position :

Single

Package Shape :

RECTANGULAR

Collector Current (DC) :

0.1(A)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA, 10V

Output Power :

Not Required(W)