NTE198

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Reach Compliance Code :

Unknown

Power Dissipation-Max (Abs) :

40 W

Package / Case :

TO-220-3

Transistor Type :

NPN

Power Dissipation Ambient-Max :

40 W

Supplier Device Package :

TO-220

Operating Temp Range :

-65C to 150C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Output Power :

Not Required(W)

Mounting :

Through Hole

Collector Current-Max (IC) :

1 A

Manufacturer :

NTE Electronics

Emitter-Base Voltage :

5(V)

Category :

Bipolar Power

Product Status :

Active

Collector-Base Voltage :

500(V)

Number of Terminals :

3

Pin Count :

3 +Tab

Case Connection :

COLLECTOR

Frequency - Transition :

10MHz

Rad Hardened :

No

Qualification Status :

Not Qualified

Transistor Polarity :

NPN

Current - Collector Cutoff (Max) :

1mA

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Mounting Type :

Through Hole

ECCN Code :

EAR99

Surface Mount :

No

Collector-Emitter Voltage-Max :

400 V

Collector Current (DC) :

1(A)

Polarity/Channel Type :

NPN

Power - Max :

2 W

JEDEC-95 Code :

TO-220AB

Package Type :

TO-220

Configuration :

Single

Voltage - Collector Emitter Breakdown (Max) :

400 V

Series :

-

Operating Temperature :

-65°C ~ 150°C (TJ)

Transistor Application :

AMPLIFIER

Subcategory :

Other Transistors

Terminal Form :

THROUGH-HOLE

Terminal Position :

Single

DC Current Gain-Min (hFE) :

10

Collector-Emitter Voltage :

400(V)

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA, 10V

Current - Collector (Ic) (Max) :

1 A

Transistor Element Material :

SILICON

Operating Temperature Classification :

Military

Package :

Bag

DC Current Gain :

30

Power Dissipation :

2(W)

HTS Code :

8541.29.00.95

Package Shape :

RECTANGULAR

Frequency :

10(MHz)