NTE199
- Mfr.Part #
- NTE199
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92
- Stock
- 272
- In Stock :
- 272
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 0.36(W)
- ECCN Code :
- EAR99
- Max Collector Current :
- 100 mA
- Max Operating Temperature :
- 125 °C
- DC Current Gain-Min (hFE) :
- 400
- Current - Collector Cutoff (Max) :
- 30nA
- Supplier Device Package :
- TO-92
- Collector-Base Voltage :
- 70(V)
- Collector Emitter Saturation Voltage :
- 125 mV
- JESD-30 Code :
- O-PBCY-W3
- Number of Elements :
- 1
- Reach Compliance Code :
- Unknown
- Mounting :
- Through Hole
- RoHS :
- Compliant
- Product Status :
- Active
- Polarity/Channel Type :
- NPN
- Width :
- 4.191 mm
- Operating Temperature Classification :
- Military
- Package :
- Bag
- Subcategory :
- Other Transistors
- Operating Temperature :
- -55°C ~ 125°C (TJ)
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Power - Max :
- 360 mW
- Terminal Position :
- BOTTOM
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- JEDEC-95 Code :
- TO-92
- Qualification Status :
- Not Qualified
- Additional Feature :
- LOW NOISE
- Configuration :
- Single
- Number of Pins :
- 3
- Manufacturer :
- NTE Electronics
- Category :
- Bipolar Small Signal
- Height :
- 5.334 mm
- Package Shape :
- Round
- Collector Emitter Voltage (VCEO) :
- 50 V
- Collector Emitter Breakdown Voltage :
- 50 V
- Output Power :
- Not Required(W)
- Operating Temp Range :
- -55C to 125C
- Collector-Emitter Voltage-Max :
- 50 V
- Vce Saturation (Max) @ Ib, Ic :
- 125mV @ 1mA, 10mA
- Collector Current (DC) :
- 0.1(A)
- Polarity :
- NPN
- Terminal Form :
- Wire
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- HTS Code :
- 8541.21.00.95
- Number of Terminals :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Collector Base Voltage (VCBO) :
- 70 V
- Power Dissipation-Max (Abs) :
- 0.36 W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 2mA, 5V
- Package Type :
- TO-92
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5 V
- Transistor Polarity :
- NPN
- Transistor Type :
- NPN
- Max Power Dissipation :
- 360 mW
- Series :
- -
- DC Current Gain :
- 400@2MA@5V
- Emitter-Base Voltage :
- 5(V)
- Collector Current-Max (IC) :
- 0.1 A
- Current - Collector (Ic) (Max) :
- 100 mA
- Weight :
- 7.257478 g
- Min Operating Temperature :
- -55 °C
- Length :
- 5.1816 mm
- Frequency - Transition :
- -
- Transistor Application :
- AMPLIFIER
- Rad Hardened :
- No
- Surface Mount :
- No
- Datasheets
- NTE199

NTE199 datasheet pdf and Discrete Semiconductor Products product details from NTE Electronics, Inc. stock available at
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