NTE235

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Mounting Type :

Through Hole

Power Dissipation :

1.2(W)

Series :

-

Power Dissipation-Max (Abs) :

12 W

DC Current Gain-Min (hFE) :

25

Collector Current-Max (IC) :

3 A

Polarity/Channel Type :

NPN

Current - Collector (Ic) (Max) :

3A

JESD-30 Code :

R-PSFM-T3

Pin Count :

3

Transistor Element Material :

SILICON

Supplier Device Package :

TO-220

Package :

Bag

Noise Figure (dB Typ @ f) :

-

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 500mA, 5V

Manufacturer :

NTE Electronics

Output Power :

4(MIN)(W)

Terminal Form :

THROUGH-HOLE

Collector-Base Voltage :

80(V)

Subcategory :

Other Transistors

Product Status :

Active

Case Connection :

COLLECTOR

Surface Mount :

No

Transistor Type :

NPN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Current (DC) :

5(A)

Package Shape :

RECTANGULAR

Frequency - Transition :

150MHz

Package / Case :

TO-220-3

Configuration :

Single

Terminal Position :

Single

Voltage - Collector Emitter Breakdown (Max) :

75V

Package Type :

TO-220

Operating Temp Range :

-55C to 150C

Type :

NPN

Power - Max :

1.2W

HTS Code :

8541.29.00.75

Operating Temperature :

150°C (TJ)

Gain :

-

Emitter-Base Voltage :

5(V)

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Number of Terminals :

3

Power Dissipation Ambient-Max :

12 W

Transistor Application :

AMPLIFIER

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified