NTE2359

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Frequency - Transition :

250 MHz

Series :

-

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector Cutoff (Max) :

500nA

Max Collector Current :

200 mA

Resistor - Emitter Base (R2) :

47 kOhms

Number of Terminals :

3

JESD-30 Code :

O-PBCY-T3

HTS Code :

8541.21.00.75

Collector Current-Max (IC) :

0.1 A

Element Configuration :

Single

Mount :

Through Hole

Weight :

7.257478 g

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

0.3 W

Height :

12.7 mm

RoHS :

Compliant

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Surface Mount :

No

Mounting Type :

Through Hole

Power - Max :

300 mW

Number of Pins :

3

Max Operating Temperature :

150 °C

Width :

76.2 mm

DC Current Gain-Min (hFE) :

50

Number of Elements :

1

Terminal Position :

BOTTOM

Length :

152.4 mm

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Resistor - Base (R1) :

47 kOhms

Transistor Type :

NPN - Pre-Biased

Subcategory :

BIP General Purpose Small Signal

Transistor Application :

SWITCHING

Voltage - Collector Emitter Breakdown (Max) :

50 V

Product Status :

Active

Collector-Emitter Voltage-Max :

50 V

Polarity/Channel Type :

NPN

Terminal Form :

THROUGH-HOLE

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Package / Case :

TO-226-3, TO-92-3 Short Body

Reach Compliance Code :

Unknown

Supplier Device Package :

TO-92S

Qualification Status :

Not Qualified

Package :

Bag

Current - Collector (Ic) (Max) :

100 mA

Pin Count :

3

Polarity :

NPN

Min Operating Temperature :

-55 °C

Manufacturer :

NTE Electronics

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 5mA, 5V

Package Shape :

Round