NTE237

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Series :

-

Package :

Bag

Operating Temperature :

-55°C ~ 175°C (TJ)

Gate Charge (Qg) (Max) @ Vgs :

140 nC @ 10 V

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package / Case :

TO-247-3

Vgs(th) (Max) @ Id :

4V @ 250µA

Technology :

MOSFET (Metal Oxide)

Supplier Device Package :

TO-247

FET Feature :

-

Power Dissipation (Max) :

230W (Tc)

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

55mOhm @ 25A, 10V

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

2800 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C :

41A (Tc)

FET Type :

N-Channel

Manufacturer :

NTE Electronics