NTE2374

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Terminal Position :

Single

Operating Temperature Classification :

Military

Drain to Source Voltage (Vdss) :

200 V

Current - Continuous Drain (Id) @ 25°C :

18A (Tc)

Vgs(th) (Max) @ Id :

4V @ 250µA

Package Type :

TO-220

Package Shape :

RECTANGULAR

Continuous Drain Current :

18(A)

FET Feature :

-

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On, Min Rds On) :

10V

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Surface Mount :

No

Rad Hardened :

No

Pulsed Drain Current-Max (IDM) :

72 A

Channel Mode :

Enhancement

Mounting :

Through Hole

Type :

Power MOSFET

Rds On (Max) @ Id, Vgs :

180mOhm @ 31A, 10V

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 25 V

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

200 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Manufacturer :

NTE Electronics

Transistor Application :

SWITCHING

Operating Temp Range :

-55C to 150C

Pin Count :

3 +Tab

FET Type :

N-Channel

Power Dissipation :

125(W)

Gate Charge (Qg) (Max) @ Vgs :

70 nC @ 10 V

Terminal Form :

THROUGH-HOLE

Polarity :

N

Power Dissipation (Max) :

125W (Tc)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.18 Ω

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

TO-220-3

Drain-Source On-Volt :

200(V)

Avalanche Energy Rating (Eas) :

580 mJ

Operating Temperature :

-55°C ~ 150°C (TJ)

Package :

Bag

Product Status :

Active

Supplier Device Package :

TO-220

Gate-Source Voltage (Max) :

±20(V)

Number of Terminals :

3

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

Series :

-

Transistor Element Material :

SILICON

Number of Elements :

1

Polarity/Channel Type :

N-Channel