NTE2393

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-3P

Package :

Bag

Current - Continuous Drain (Id) @ 25°C :

10A (Tc)

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

9 A

Rds On (Max) @ Id, Vgs :

670mOhm @ 5A, 10V

Number of Terminals :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Subcategory :

FET General Purpose Power

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

500 V

Drain to Source Voltage (Vdss) :

500 V

Surface Mount :

No

ECCN Code :

EAR99

Operating Temperature :

150°C (TJ)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Drive Voltage (Max Rds On, Min Rds On) :

10V

Series :

-

Transistor Element Material :

SILICON

Power Dissipation (Max) :

125W (Tc)

Vgs (Max) :

±20V

Polarity/Channel Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.7 Ω

Number of Elements :

1

Power Dissipation-Max (Abs) :

150 W

Package / Case :

TO-3P-3, SC-65-3

Product Status :

Active

Terminal Form :

THROUGH-HOLE

FET Feature :

-

Vgs(th) (Max) @ Id :

4V @ 1mA

Pulsed Drain Current-Max (IDM) :

36 A

Manufacturer :

NTE Electronics