NTE2408

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Voltage - Collector Emitter Breakdown (Max) :

65 V

Frequency :

300(MHz)

Operating Temperature :

150°C (TJ)

Collector-Base Voltage :

80(V)

HTS Code :

8541.21.00.75

Power Dissipation :

0.2(W)

DC Current Gain (hFE) (Min) @ Ic, Vce :

290 @ 2mA, 5V

Frequency - Transition :

300MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature Classification :

Military

Transistor Application :

AMPLIFIER

Supplier Device Package :

SOT-23

Number of Terminals :

3

Current - Collector (Ic) (Max) :

100 mA

Package Shape :

RECTANGULAR

Configuration :

Single

Emitter-Base Voltage :

6(V)

Additional Feature :

LOW NOISE

Current - Collector Cutoff (Max) :

15nA (ICBO)

Collector-Emitter Voltage-Max :

65 V

Rad Hardened :

No

Series :

-

Output Power :

Not Required(W)

Transistor Polarity :

NPN

Terminal Form :

Gull wing

Subcategory :

Other Transistors

Product Status :

Active

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package Type :

SOT-23

ECCN Code :

EAR99

Manufacturer :

NTE Electronics

Mounting :

Surface Mount

JESD-30 Code :

R-PDSO-G3

Surface Mount :

yes

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Reach Compliance Code :

Unknown

Collector Current-Max (IC) :

0.1 A

Category :

Bipolar Small Signal

DC Current Gain-Min (hFE) :

125

Terminal Position :

Dual

Qualification Status :

Not Qualified

Collector Current (DC) :

0.1(A)

Mounting Type :

Surface Mount

Pin Count :

3

Power Dissipation-Max (Abs) :

0.2 W

Power - Max :

200 mW

Transistor Type :

NPN

Operating Temp Range :

-65C to 150C

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN

Package :

Bag