NTE2411
- Mfr.Part #
- NTE2411
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.5A SOT23
- Stock
- 9,486
- In Stock :
- 9,486
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reach Compliance Code :
- Unknown
- Collector Current-Max (IC) :
- 0.5 A
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 50nA (ICBO)
- Transistor Type :
- PNP
- Collector-Emitter Voltage-Max :
- 150 V
- Power Dissipation-Max (Abs) :
- 0.35 W
- Number of Elements :
- 1
- Product Status :
- Active
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA, 5V
- Number of Terminals :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- JESD-30 Code :
- R-PDSO-G3
- Subcategory :
- Other Transistors
- Surface Mount :
- yes
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Terminal Position :
- Dual
- Frequency - Transition :
- 300MHz
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- SOT-23
- Qualification Status :
- Not Qualified
- Configuration :
- Single
- Manufacturer :
- NTE Electronics
- Series :
- -
- Current - Collector (Ic) (Max) :
- 500 mA
- DC Current Gain-Min (hFE) :
- 50
- Voltage - Collector Emitter Breakdown (Max) :
- 150 V
- HTS Code :
- 8541.21.00.95
- Package :
- Bag
- Transistor Element Material :
- SILICON
- Power - Max :
- 225 mW
- ECCN Code :
- EAR99
- Datasheets
- NTE2411

PNP -55°C ~ 150°C (TJ) 50nA (ICBO) 1 Elements SILICON PNP TO-236-3, SC-59, SOT-23-3 Surface Mount
NTE2411 Overview
In this device, the DC current gain is 60 @ 10mA, 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 5mA, 50mA.Product comes in the supplier's device package SOT-23.150 V is set as the maximum collector-emitter voltage.There is a 150 V maximal voltage in the device due to collector-emitter breakdown.
NTE2411 Features
the DC current gain for this device is 60 @ 10mA, 5V
the vce saturation(Max) is 1V @ 5mA, 50mA
the supplier device package of SOT-23
NTE2411 Applications
There are a lot of NTE Electronics, Inc
NTE2411 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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