NTE2412
- Mfr.Part #
- NTE2412
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.1A SOT23
- Stock
- 1,661
- In Stock :
- 1,661
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- HTS Code :
- 8541.21.00.95
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C (TJ)
- Current - Collector (Ic) (Max) :
- 100 mA
- Surface Mount :
- yes
- Series :
- -
- Product Status :
- Active
- Weight :
- 4.535924 g
- Height :
- 6.35 mm
- Max Operating Temperature :
- 150 °C
- Collector Emitter Voltage (VCEO) :
- 300 V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 56 @ 10mA, 10V
- Qualification Status :
- Not Qualified
- Power Dissipation-Max (Abs) :
- 0.31 W
- Collector-Emitter Voltage-Max :
- 300 V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 5mA, 50mA
- Subcategory :
- Other Transistors
- Current - Collector Cutoff (Max) :
- 500nA (ICBO)
- DC Current Gain-Min (hFE) :
- 56
- Length :
- 165.1 mm
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Voltage - Collector Emitter Breakdown (Max) :
- 300 V
- Min Operating Temperature :
- -55 °C
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 300 V
- Configuration :
- Single
- Max Collector Current :
- 100 mA
- Manufacturer :
- NTE Electronics
- Collector Current-Max (IC) :
- 0.1 A
- Package :
- Bag
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Number of Terminals :
- 3
- Emitter Base Voltage (VEBO) :
- 5 V
- Transistor Type :
- NPN
- Frequency - Transition :
- 100MHz
- RoHS :
- Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package :
- SOT-23
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PDSO-G3
- Reach Compliance Code :
- Unknown
- Power - Max :
- 200 mW
- Width :
- 101.6 mm
- Transistor Application :
- AMPLIFIER
- Datasheets
- NTE2412

NPN 150°C (TJ) 500nA (ICBO) 1 Elements SILICON NPN TO-236-3, SC-59, SOT-23-3 Surface Mount
NTE2412 Overview
This device has a DC current gain of 56 @ 10mA, 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5 V to achieve high efficiency.Single BJT transistor comes in a supplier device package of SOT-23.Maximum collector-emitter voltage can be set to 300 V.Detection of Collector Emitter Breakdown at 300 V maximal voltage is present.The maximum collector current is 100 mA volts.
NTE2412 Features
the DC current gain for this device is 56 @ 10mA, 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 5 V
the supplier device package of SOT-23
NTE2412 Applications
There are a lot of NTE Electronics, Inc
NTE2412 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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