NTE2419

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Emitter Base (R2) :

47 kOhms

Transistor Type :

PNP - Pre-Biased

Collector Current-Max (IC) :

0.1 A

Number of Elements :

1

JESD-30 Code :

R-PDSO-G3

Length :

165.1 mm

Number of Terminals :

3

Weight :

4.535924 g

ECCN Code :

EAR99

Supplier Device Package :

SOT-23

Current - Collector Cutoff (Max) :

500nA

Transistor Element Material :

SILICON

Polarity/Channel Type :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA, 5V

Transistor Application :

SWITCHING

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Collector-Emitter Voltage-Max :

50 V

Subcategory :

BIP General Purpose Small Signal

HTS Code :

8541.21.00.75

Package / Case :

TO-236-3, SC-59, SOT-23-3

Package Shape :

RECTANGULAR

Series :

-

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Voltage - Collector Emitter Breakdown (Max) :

50 V

Qualification Status :

Not Qualified

Frequency - Transition :

200 MHz

Min Operating Temperature :

-55 °C

Element Configuration :

Single

DC Current Gain-Min (hFE) :

50

Surface Mount :

yes

Width :

101.6 mm

Height :

6.35 mm

Terminal Form :

Gull wing

RoHS :

Compliant

Power Dissipation-Max (Abs) :

0.2 W

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Package :

Bag

Mount :

Surface Mount

Max Collector Current :

200 mA

Current - Collector (Ic) (Max) :

100 mA

Mounting Type :

Surface Mount

Terminal Position :

Dual

Number of Pins :

3

Product Status :

Active

Manufacturer :

NTE Electronics

Reach Compliance Code :

Unknown

Max Operating Temperature :

150 °C

Power - Max :

200 mW

Resistor - Base (R1) :

47 kOhms