NTE2430
- Mfr.Part #
- NTE2430
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 350V 1A SOT89
- Stock
- 483
- In Stock :
- 483
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 20nA
- Collector Current (DC) :
- 1(A)
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA, 10V
- Supplier Device Package :
- SOT-89
- Qualification Status :
- Not Qualified
- Operating Temperature :
- 150°C (TJ)
- Product Status :
- Active
- Terminal Form :
- Flat
- Output Power :
- Not Required(W)
- Current - Collector (Ic) (Max) :
- 1 A
- JESD-30 Code :
- R-PSSO-F3
- Package :
- Bag
- Transistor Type :
- NPN
- Power Dissipation :
- 1(W)
- Emitter-Base Voltage :
- 5(V)
- Frequency :
- 70(MHz)
- Reach Compliance Code :
- Unknown
- Rad Hardened :
- No
- Frequency - Transition :
- 70MHz
- ECCN Code :
- EAR99
- Power Dissipation-Max (Abs) :
- 1 W
- DC Current Gain :
- 40
- Series :
- -
- Subcategory :
- Other Transistors
- Pin Count :
- 3 +Tab
- Surface Mount :
- yes
- DC Current Gain-Min (hFE) :
- 40
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Package Shape :
- RECTANGULAR
- Operating Temp Range :
- -65C to 150C
- Number of Terminals :
- 3
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Terminal Position :
- Single
- Manufacturer :
- NTE Electronics
- Package / Case :
- TO-243AA
- Collector Current-Max (IC) :
- 1 A
- Operating Temperature Classification :
- Military
- Collector-Emitter Voltage-Max :
- 350 V
- Power - Max :
- 1 W
- Mounting :
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 350 V
- Case Connection :
- COLLECTOR
- Package Type :
- SOT-89
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Collector-Base Voltage :
- 400(V)
- Transistor Polarity :
- NPN
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- HTS Code :
- 8541.29.00.75
- Category :
- Bipolar Power
- Datasheets
- NTE2430

NPN 150°C (TJ) 20nA 1 Elements SILICON NPN TO-243AA Surface Mount
NTE2430 Overview
DC current gain in this device equals 40 @ 20mA, 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 4mA, 50mA.Product comes in SOT-89 supplier package.Maximal collector-emitter voltage can be set at 350 V.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
NTE2430 Features
the DC current gain for this device is 40 @ 20mA, 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the supplier device package of SOT-89
NTE2430 Applications
There are a lot of NTE Electronics, Inc
NTE2430 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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