NTE253

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Package Shape :

RECTANGULAR

Polarity :

NPN

Surface Mount :

No

Transistor Application :

AMPLIFIER

Terminal Position :

Single

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Collector-Base Voltage :

80(V)

Number of Elements :

1

Operating Temp Range :

-65C to 150C

Collector-Emitter Voltage :

80(V)

DC Current Gain :

100

Package / Case :

TO-225AA, TO-126-3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Current-Max (IC) :

4 A

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A, 3V

DC Current Gain-Min (hFE) :

100

Rad Hardened :

No

Mounting :

Through Hole

Configuration :

Single

Maximum Collector Cut-off Current :

500

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Operating Temperature Classification :

Military

Power Dissipation :

40(W)

Frequency - Transition :

-

Voltage - Collector Emitter Breakdown (Max) :

80 V

Package :

Bag

Polarity/Channel Type :

NPN

Power - Max :

40 W

Operating Temperature :

-65°C ~ 150°C (TJ)

Transistor Type :

NPN - Darlington

Number of Terminals :

3

Current - Collector (Ic) (Max) :

4 A

Subcategory :

Other Transistors

Collector-Emitter Voltage-Max :

80 V

Current - Collector Cutoff (Max) :

100μA

Product Status :

Active

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Supplier Device Package :

TO-126

Collector Current (DC) :

4(A)

Package Type :

TO-126

Power Dissipation Ambient-Max :

40 W

Pin Count :

3

Terminal Form :

Wire

JEDEC-95 Code :

TO-126

Manufacturer :

NTE Electronics

Series :

-

Power Dissipation-Max (Abs) :

40 W

Emitter-Base Voltage :

5(V)

JESD-30 Code :

R-PSFM-W3

Mounting Type :

Through Hole