NTE2987

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±15V

Package Shape :

RECTANGULAR

Operating Temperature Classification :

Military

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

100 V

Power Dissipation (Max) :

105W (Tc)

Configuration :

Single

Technology :

MOSFET (Metal Oxide)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

175°C (TJ)

Avalanche Energy Rating (Eas) :

120 mJ

Rad Hardened :

No

Series :

-

Drain-Source On-Volt :

100(V)

Pin Count :

3 +Tab

Channel Mode :

Enhancement

Terminal Form :

THROUGH-HOLE

FET Type :

N-Channel

Case Connection :

DRAIN

Package Type :

TO-220

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Surface Mount :

No

Transistor Application :

SWITCHING

Operating Temp Range :

-65C to 175C

FET Feature :

Logic Level Gate, 4V Drive

Drain-source On Resistance-Max :

0.12 Ω

Supplier Device Package :

TO-220

Package :

Bag

Gate-Source Voltage (Max) :

±15(V)

Current - Continuous Drain (Id) @ 25°C :

20A

Input Capacitance (Ciss) (Max) @ Vds :

1500 pF @ 25 V

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On, Min Rds On) :

5V

Drain to Source Voltage (Vdss) :

100 V

Manufacturer :

NTE Electronics

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-220-3

Number of Terminals :

3

Mounting :

Through Hole

Additional Feature :

FAST SWITCHING

Terminal Position :

Single

Polarity/Channel Type :

N-Channel

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

120mOhm @ 10A, 5V

Type :

Power MOSFET

Continuous Drain Current :

20(A)

Product Status :

Active

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

Polarity :

N

Gate Charge (Qg) (Max) @ Vgs :

30 nC @ 5 V

Power Dissipation :

105(W)

Pulsed Drain Current-Max (IDM) :

80 A

Vgs(th) (Max) @ Id :

2.5V @ 250μA