2N7000

- Mfr.Part #
- 2N7000
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 200MA TO92-3
- Stock
- 4,793





- In Stock :
- 4,793
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- No SVHC
- Published :
- 2011
- Number of Elements :
- 1
- Max Operating Temperature :
- 150°C
- Resistance :
- 5Ohm
- Drain to Source Voltage (Vdss) :
- 60V
- Turn-Off Delay Time :
- 10 ns
- Supplier Device Package :
- TO-92-3
- Rds On Max :
- 5 Ω
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Number of Channels :
- 1
- Factory Lead Time :
- 11 Weeks
- Rds On (Max) @ Id, Vgs :
- 5Ohm @ 500mA, 10V
- Power Dissipation :
- 400mW
- Power Dissipation-Max :
- 400mW Ta
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 60V
- Contact Plating :
- Copper, Silver, Tin
- Min Operating Temperature :
- -55°C
- Continuous Drain Current (ID) :
- 200mA
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Resistance :
- 1.2Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 60V
- Input Capacitance :
- 40pF
- Length :
- 4.8mm
- Nominal Vgs :
- 2.1 V
- Width :
- 4.19mm
- Packaging :
- Bulk
- Weight :
- 201mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- 2N7000
- Current Rating :
- 200mA
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Ta
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Height :
- 5.2mm
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Mount :
- Through Hole
- Threshold Voltage :
- 2.1V
- Datasheets
- 2N7000

N-Channel Bulk 5Ohm @ 500mA, 10V ±20V 50pF @ 25V 60V TO-226-3, TO-92-3 (TO-226AA)
2N7000 is a well-known N-channel MOSFET in a TO-92 package. Unlike BJT transistors, which are current-controlled devices, MOSFETs are devices that are controlled by applying a voltage to their gate. One of the key features of MOSFET technology is that the transistor requires very little or no input current to control the load, making MOSFETs ideal for use as amplifiers. The 2N7000 also has all these features, so it can be used in many general-purpose switching applications. It offers good performance when used as an amplifier, so you can use it for audio and other signal amplification purposes.
2N7000 Features
High cell density
High saturation current
Drain-to-source voltage of 60 V
Operating temperature of -55 °C to 150 °C
Rugged, reliable, and fast switching performance
2N7000 Applications
IC output
Audio preamplifier
Audio amplification
Microcontroller output
Various signal amplification
Switch or control loads under 200mA
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