2N7000-G
- Mfr.Part #
- 2N7000-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 200MA TO92-3
- Stock
- 995
- In Stock :
- 995
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Style :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 5 Ω @ 500mA, 10V
- Package Type :
- TO-92
- Continuous Drain Current (ID) :
- 200mA
- Vgs (Max) :
- ±30V
- Pin Count :
- 3
- RoHS :
- Details
- Length :
- 5.21mm
- Terminal Form :
- THROUGH-HOLE
- Minimum Operating Temperature :
- -55 °C
- Terminal Finish :
- Matte Tin (Sn)
- Maximum Operating Temperature :
- +150 °C
- DS Breakdown Voltage-Min :
- 60 V
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 10 ns
- Transistor Type :
- 1 N-Channel
- Gate-Source Voltage (Max) :
- ±30(V)
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Width :
- 4.19mm
- Number of Terminations :
- 3
- Base Product Number :
- 2N7000
- Transistor Application :
- SWITCHING
- Continuous Drain Current Id :
- 200
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Continuous Drain Current :
- 0.2(A)
- Brand :
- Microchip Technology / Atmel
- Power Dissipation :
- 1W
- FET Type :
- N-Channel
- Published :
- 2008
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max :
- 1W Tc
- Polarity/Channel Type :
- N-Channel
- JESD-609 Code :
- e3
- Packaging :
- Bulk
- Number of Terminals :
- 3
- Height :
- 5.334mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 60V
- Contact Plating :
- Tin
- Turn On Delay Time :
- 10 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max (Abs) :
- 1 W
- Drain-source On Resistance-Max :
- 5Ohm
- Series :
- --
- JEDEC-95 Code :
- TO-92
- Input Capacitance (Ciss) (Max) @ Vds :
- 60pF @ 25V
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Weight :
- 453.59237mg
- Transistor Polarity :
- N-Channel
- Reach Compliance Code :
- Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Tj
- Configuration :
- Single
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Elements :
- 1
- Feedback Cap-Max (Crss) :
- 5 pF
- Product Category :
- MOSFET
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Factory Lead Time :
- 6 Weeks
- Surface Mount :
- No
- REACH SVHC :
- No SVHC
- Package Shape :
- Round
- Manufacturer :
- Microchip
- Current Rating :
- 200mA
- Drain-Source On-Volt :
- 60(V)
- Operating Temp Range :
- -55C to 150C
- Mounting :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation (Max) :
- 1W (Tc)
- Supplier Device Package :
- TO-92-3
- Number of Elements per Chip :
- 1
- MSL :
- -
- Operating Temperature Classification :
- Military
- Package :
- Bag
- Number of Channels :
- 1
- Terminal Position :
- BOTTOM
- JESD-30 Code :
- O-PBCY-T3
- Qualification :
- -
- Product Type :
- MOSFET
- Additional Feature :
- HIGH INPUT IMPEDANCE
- Rad Hardened :
- No
- Voltage - Rated DC :
- 60V
- Threshold Voltage :
- 800mV
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Channel Mode :
- Enhancement
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 60V
- Type :
- Power MOSFET
- Polarity :
- N
- Radiation Hardening :
- No
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- FET Feature :
- --
- Channel Type :
- N
- Product Status :
- Active
- Datasheets
- 2N7000-G

N-Channel Bulk 5 Ω @ 500mA, 10V ±30V 60pF @ 25V 60V TO-226-3, TO-92-3 (TO-226AA)
2N7000-G Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 60pF @ 25V.This device has a continuous drain current (ID) of [200mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.A device's drain current is its maximum continuous current, and this device's drain current is 0.2A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 10 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 800mV.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60 V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
2N7000-G Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 10 ns
a threshold voltage of 800mV
a 60V drain to source voltage (Vdss)
2N7000-G Applications
There are a lot of Microchip Technology
2N7000-G applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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