2N7000-G

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Mfr.Part #
2N7000-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 60V 200MA TO92-3
Stock
995
In Stock :
995

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Style :
Through Hole
Rds On (Max) @ Id, Vgs :
5 Ω @ 500mA, 10V
Package Type :
TO-92
Continuous Drain Current (ID) :
200mA
Vgs (Max) :
±30V
Pin Count :
3
RoHS :
Details
Length :
5.21mm
Terminal Form :
THROUGH-HOLE
Minimum Operating Temperature :
-55 °C
Terminal Finish :
Matte Tin (Sn)
Maximum Operating Temperature :
+150 °C
DS Breakdown Voltage-Min :
60 V
Lead Free :
Lead Free
Turn-Off Delay Time :
10 ns
Transistor Type :
1 N-Channel
Gate-Source Voltage (Max) :
±30(V)
Element Configuration :
Single
ECCN Code :
EAR99
Width :
4.19mm
Number of Terminations :
3
Base Product Number :
2N7000
Transistor Application :
SWITCHING
Continuous Drain Current Id :
200
Vgs(th) (Max) @ Id :
3V @ 1mA
Continuous Drain Current :
0.2(A)
Brand :
Microchip Technology / Atmel
Power Dissipation :
1W
FET Type :
N-Channel
Published :
2008
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max :
1W Tc
Polarity/Channel Type :
N-Channel
JESD-609 Code :
e3
Packaging :
Bulk
Number of Terminals :
3
Height :
5.334mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Breakdown Voltage :
60V
Contact Plating :
Tin
Turn On Delay Time :
10 ns
Gate to Source Voltage (Vgs) :
30V
Power Dissipation-Max (Abs) :
1 W
Drain-source On Resistance-Max :
5Ohm
Series :
--
JEDEC-95 Code :
TO-92
Input Capacitance (Ciss) (Max) @ Vds :
60pF @ 25V
Drain Current-Max (Abs) (ID) :
0.2A
Weight :
453.59237mg
Transistor Polarity :
N-Channel
Reach Compliance Code :
Compliant
Current - Continuous Drain (Id) @ 25°C :
200mA Tj
Configuration :
Single
Qualification Status :
Not Qualified
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Number of Elements :
1
Feedback Cap-Max (Crss) :
5 pF
Product Category :
MOSFET
Peak Reflow Temperature (Cel) :
Not Applicable
Factory Lead Time :
6 Weeks
Surface Mount :
No
REACH SVHC :
No SVHC
Package Shape :
Round
Manufacturer :
Microchip
Current Rating :
200mA
Drain-Source On-Volt :
60(V)
Operating Temp Range :
-55C to 150C
Mounting :
Through Hole
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Power Dissipation (Max) :
1W (Tc)
Supplier Device Package :
TO-92-3
Number of Elements per Chip :
1
MSL :
-
Operating Temperature Classification :
Military
Package :
Bag
Number of Channels :
1
Terminal Position :
BOTTOM
JESD-30 Code :
O-PBCY-T3
Qualification :
-
Product Type :
MOSFET
Additional Feature :
HIGH INPUT IMPEDANCE
Rad Hardened :
No
Voltage - Rated DC :
60V
Threshold Voltage :
800mV
Operating Temperature :
-55°C~150°C TJ
Mount :
Through Hole
Channel Mode :
Enhancement
Transistor Element Material :
SILICON
Number of Pins :
3
Mounting Type :
Through Hole
Drain to Source Voltage (Vdss) :
60V
Type :
Power MOSFET
Polarity :
N
Radiation Hardening :
No
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
FET Feature :
--
Channel Type :
N
Product Status :
Active
Datasheets
2N7000-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology 2N7000-G from Xinshop,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Type:Power MOSFET, Package / Case:TO-226-3, TO-92-3 (TO-226AA), 2N7000-G pinout, 2N7000-G datasheet PDF, 2N7000-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology 2N7000-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 2N7000-G


N-Channel Bulk 5 Ω @ 500mA, 10V ±30V 60pF @ 25V 60V TO-226-3, TO-92-3 (TO-226AA)

2N7000-G Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 60pF @ 25V.This device has a continuous drain current (ID) of [200mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.A device's drain current is its maximum continuous current, and this device's drain current is 0.2A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 10 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 800mV.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60 V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

2N7000-G Features


a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 10 ns
a threshold voltage of 800mV
a 60V drain to source voltage (Vdss)


2N7000-G Applications


There are a lot of Microchip Technology
2N7000-G applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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