2N7000-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temp Range :

-55C to 150C

Terminal Form :

THROUGH-HOLE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Maximum Operating Temperature :

+150 °C

Voltage - Rated DC :

60V

Package Type :

TO-92

Channel Type :

N

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

60V

Turn-Off Delay Time :

10 ns

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

60V

Weight :

453.59237mg

Transistor Type :

1 N-Channel

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

200mA Tj

Height :

5.334mm

Drain Current-Max (Abs) (ID) :

0.2A

Qualification :

-

Rad Hardened :

No

Vgs (Max) :

±30V

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

5Ohm

Package :

Bag

Manufacturer :

Microchip

Power Dissipation (Max) :

1W (Tc)

JESD-30 Code :

O-PBCY-T3

RoHS Status :

ROHS3 Compliant

Package Shape :

Round

REACH SVHC :

No SVHC

Additional Feature :

HIGH INPUT IMPEDANCE

Length :

5.21mm

JEDEC-95 Code :

TO-92

Product Category :

MOSFET

Drain-Source On-Volt :

60(V)

Surface Mount :

No

Power Dissipation :

1W

Turn On Delay Time :

10 ns

Power Dissipation-Max :

1W Tc

Polarity :

N

Type :

Power MOSFET

Number of Terminations :

3

Packaging :

Bulk

Terminal Position :

BOTTOM

Peak Reflow Temperature (Cel) :

Not Applicable

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Radiation Hardening :

No

Operating Temperature Classification :

Military

MSL :

-

Threshold Voltage :

800mV

Continuous Drain Current :

0.2(A)

Lead Free :

Lead Free

Reach Compliance Code :

Compliant

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Mounting Style :

Through Hole

Number of Channels :

1

Gate-Source Voltage (Max) :

±30(V)

Minimum Operating Temperature :

-55 °C

Supplier Device Package :

TO-92-3

Series :

--

Factory Lead Time :

6 Weeks

Brand :

Microchip Technology / Atmel

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

RoHS :

Details

Number of Terminals :

3

Feedback Cap-Max (Crss) :

5 pF

Polarity/Channel Type :

N-Channel

FET Feature :

--

Number of Elements per Chip :

1

Pin Count :

3

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Qualification Status :

Not Qualified

Channel Mode :

Enhancement

Element Configuration :

Single

Transistor Application :

SWITCHING

Published :

2008

Mounting :

Through Hole

DS Breakdown Voltage-Min :

60 V

Current Rating :

200mA

Vgs(th) (Max) @ Id :

3V @ 1mA

Continuous Drain Current Id :

200

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Type :

MOSFET

Configuration :

Single

Continuous Drain Current (ID) :

200mA

Base Product Number :

2N7000

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

Width :

4.19mm

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Transistor Polarity :

N-Channel

Number of Elements :

1

Product Status :

Active

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max (Abs) :

1 W