2N7000BU

- Mfr.Part #
- 2N7000BU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 200MA TO92-3
- Stock
- 1





- In Stock :
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 0.2A
- JESD-609 Code :
- e3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 10 ns
- Contact Plating :
- Copper, Silver, Tin
- Turn-Off Delay Time :
- 10 ns
- Voltage - Rated DC :
- 60V
- Number of Pins :
- 3
- Base Part Number :
- 2N7000
- Factory Lead Time :
- 11 Weeks
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 400mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2013
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Rise Time :
- 10ns
- Resistance :
- 5Ohm
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 60V
- Fall Time (Typ) :
- 10 ns
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 200mA
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 400mW Ta
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Threshold Voltage :
- 3.9V
- Continuous Drain Current (ID) :
- 200mA
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 5 Ω @ 500mA, 10V
- Datasheets
- 2N7000BU

N-Channel Bulk 5 Ω @ 500mA, 10V ±20V 50pF @ 25V TO-226-3, TO-92-3 (TO-226AA)
2N7000BU Description
2N7000BU belongs to the family of N-channel enhancement-mode field-effect transistors that are designed based on the proprietary, high cell density, DMOS technology provided by ON Semiconductor. Based on this technology, 2N7000BU FET is capable of minimizing on-state resistance while providing rugged, reliable, and fast switching performance. Due to its specific characteristics, it is well suited for applications requiring low voltage and low current.
2N7000BU Features
-
DMOS technology
-
Advanced switching performance
-
High cell density design for low RDS (on)
-
High saturation current capability
-
Available in the TO-92 and SOT-23 package
2N7000BU Applications
-
Small servo motor control
-
Power MOSFET gate drivers
-
Other switching applications
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