2N7000

- Mfr.Part #
- 2N7000
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 24,257





- In Stock :
- 24,257
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 150°C
- Number of Elements :
- 1
- Resistance :
- 5Ohm
- Packaging :
- Bulk
- Width :
- 4.19mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Drain to Source Voltage (Vdss) :
- 60V
- Drain to Source Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Vgs (Max) :
- ±20V
- Drain to Source Resistance :
- 1.2Ohm
- Height :
- 5.2mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Min Operating Temperature :
- -55°C
- Input Capacitance :
- 40pF
- Base Part Number :
- 2N7000
- Continuous Drain Current (ID) :
- 200mA
- Turn-Off Delay Time :
- 10 ns
- Threshold Voltage :
- 2.1V
- Element Configuration :
- Single
- Supplier Device Package :
- TO-92-3
- Rds On (Max) @ Id, Vgs :
- 5Ohm @ 500mA, 10V
- Number of Channels :
- 1
- Mounting Type :
- Through Hole
- Rds On Max :
- 5 Ω
- Power Dissipation-Max :
- 400mW Ta
- Published :
- 2011
- Length :
- 4.8mm
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 400mW
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Ta
- Weight :
- 201mg
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 60V
- FET Type :
- N-Channel
- Nominal Vgs :
- 2.1 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 11 Weeks
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 200mA
- Contact Plating :
- Copper, Silver, Tin
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Datasheets
- 2N7000

N-Channel Bulk 5Ohm @ 500mA, 10V ±20V 50pF @ 25V 60V TO-226-3, TO-92-3 (TO-226AA)
2N7000 is a well-known N-channel MOSFET in a TO-92 package. Unlike BJT transistors, which are current-controlled devices, MOSFETs are devices that are controlled by applying a voltage to their gate. One of the key features of MOSFET technology is that the transistor requires very little or no input current to control the load, making MOSFETs ideal for use as amplifiers. The 2N7000 also has all these features, so it can be used in many general-purpose switching applications. It offers good performance when used as an amplifier, so you can use it for audio and other signal amplification purposes.
2N7000 Features
High cell density
High saturation current
Drain-to-source voltage of 60 V
Operating temperature of -55 °C to 150 °C
Rugged, reliable, and fast switching performance
2N7000 Applications
IC output
Audio preamplifier
Audio amplification
Microcontroller output
Various signal amplification
Switch or control loads under 200mA
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