2N7000

- Mfr.Part #
- 2N7000
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 200MA TO92-3
- Stock
- 4,793





- In Stock :
- 4,793
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance :
- 40pF
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Base Part Number :
- 2N7000
- REACH SVHC :
- No SVHC
- Width :
- 4.19mm
- Drain to Source Breakdown Voltage :
- 60V
- Contact Plating :
- Copper, Silver, Tin
- Voltage - Rated DC :
- 60V
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- Lead Free :
- Lead Free
- Weight :
- 201mg
- Number of Channels :
- 1
- Drain to Source Resistance :
- 1.2Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 5Ohm @ 500mA, 10V
- Rds On Max :
- 5 Ω
- Continuous Drain Current (ID) :
- 200mA
- Nominal Vgs :
- 2.1 V
- Number of Pins :
- 3
- Height :
- 5.2mm
- Published :
- 2011
- Length :
- 4.8mm
- Resistance :
- 5Ohm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Factory Lead Time :
- 11 Weeks
- Turn-Off Delay Time :
- 10 ns
- Min Operating Temperature :
- -55°C
- Power Dissipation-Max :
- 400mW Ta
- Drain to Source Voltage (Vdss) :
- 60V
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Packaging :
- Bulk
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 400mW
- Supplier Device Package :
- TO-92-3
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Current Rating :
- 200mA
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Ta
- Threshold Voltage :
- 2.1V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- 2N7000

N-Channel Bulk 5Ohm @ 500mA, 10V ±20V 50pF @ 25V 60V TO-226-3, TO-92-3 (TO-226AA)
2N7000 is a well-known N-channel MOSFET in a TO-92 package. Unlike BJT transistors, which are current-controlled devices, MOSFETs are devices that are controlled by applying a voltage to their gate. One of the key features of MOSFET technology is that the transistor requires very little or no input current to control the load, making MOSFETs ideal for use as amplifiers. The 2N7000 also has all these features, so it can be used in many general-purpose switching applications. It offers good performance when used as an amplifier, so you can use it for audio and other signal amplification purposes.
2N7000 Features
High cell density
High saturation current
Drain-to-source voltage of 60 V
Operating temperature of -55 °C to 150 °C
Rugged, reliable, and fast switching performance
2N7000 Applications
IC output
Audio preamplifier
Audio amplification
Microcontroller output
Various signal amplification
Switch or control loads under 200mA
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