2N7000,126

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

830mW Ta

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Peak Reflow Temperature (Cel) :

250

Drain to Source Voltage (Vdss) :

60V

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

0.3A

Terminal Finish :

Tin

Qualification Status :

Not Qualified

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

300mA Tc

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

HTS Code :

8541.21.00.95

Feedback Cap-Max (Crss) :

10 pF

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Surface Mount :

No

FET Type :

N-Channel

Drain-source On Resistance-Max :

5Ohm

DS Breakdown Voltage-Min :

60V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

JESD-30 Code :

O-PBCY-T3

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchMOS™

ECCN Code :

EAR99

Pin Count :

3

Number of Terminations :

3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Box (TB)

Terminal Position :

BOTTOM

Vgs(th) (Max) @ Id :

2V @ 1mA