2N7002

- Mfr.Part #
- 2N7002
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Description
- MOSFET N-CH 60V 115MA SOT-23
- Stock
- 13,115





- In Stock :
- 13,115
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- SOT-23 (TO-236AB)
- Drain to Source Resistance :
- 1.2Ohm
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Threshold Voltage :
- 2.1V
- Max Operating Temperature :
- 150°C
- Input Capacitance :
- 50pF
- Voltage :
- 60V
- Published :
- 2016
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current :
- 115mA
- Dual Supply Voltage :
- 60V
- Height :
- 930μm
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Lead Free :
- Lead Free
- Width :
- 3.05mm
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Min Operating Temperature :
- -55°C
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 115mA
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 115mA Ta
- Number of Pins :
- 3
- Nominal Vgs :
- 2.1 V
- Power Dissipation-Max :
- 200mW Ta
- Drain to Source Voltage (Vdss) :
- 60V
- Base Part Number :
- 2N7002
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Resistance :
- 5.3Ohm
- Current Rating :
- 115mA
- REACH SVHC :
- No SVHC
- Length :
- 2.92mm
- Rds On (Max) @ Id, Vgs :
- 7.5Ohm @ 500mA, 10V
- Rds On Max :
- 7.5 Ω
- Drain to Source Breakdown Voltage :
- 60V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 200mW
- Factory Lead Time :
- 8 Weeks

N-Channel Tape & Reel (TR) 7.5Ohm @ 500mA, 10V ±20V 50pF @ 25V 60V TO-236-3, SC-59, SOT-23-3
2N7002 Description
2N7002 is a N-channel enhanced FET, which is produced by high cell density and DMOS process. The product minimizes on-resistance and provides durable, reliable and fast switching performance. It can be used in most applications that require up to 400 mA DC and can provide pulse currents up to 2A. Suitable for low-voltage, low-current applications, such as small servo motor control or power MOSFET gate drivers.
2N7002 Features
High density battery design for very low RDS (ON)
High saturation current capacity
Voltage controlled small signal switch
Solid and reliable
2N7002 Application
Power management
motor drive and control
audio
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