BSH103,235

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

8V

Vgs (Max) :

±8V

Rds On (Max) @ Id, Vgs :

400m Ω @ 500mA, 4.5V

Radiation Hardening :

No

HTS Code :

8541.21.00.75

Transistor Application :

SWITCHING

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

850mA Ta

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

3

Fall Time (Typ) :

3.5 ns

Terminal Position :

Dual

ECCN Code :

EAR99

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Number of Elements :

1

Turn-Off Delay Time :

20 ns

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Published :

1998

Max Dual Supply Voltage :

30V

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Turn On Delay Time :

2.5 ns

Drain-source On Resistance-Max :

0.5Ohm

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

2.5V

Continuous Drain Current (ID) :

850mA

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V

Power Dissipation :

500mW

Input Capacitance (Ciss) (Max) @ Vds :

83pF @ 24V

Power Dissipation-Max :

540mW Ta

Vgs(th) (Max) @ Id :

400mV @ 1mA (Min)

Surface Mount :

yes

Pin Count :

3

Rise Time :

3.5ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain Current-Max (Abs) (ID) :

0.85A

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Factory Lead Time :

4 Weeks