BSH105,215

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

JESD-609 Code :

e3

Published :

1998

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

Power Dissipation :

417mW

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

200m Ω @ 600mA, 4.5V

Number of Elements :

1

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

570mV @ 1mA

HTS Code :

8541.21.00.95

Vgs (Max) :

±8V

Drain to Source Voltage (Vdss) :

20V

DS Breakdown Voltage-Min :

20V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

3.9nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

417mW Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Continuous Drain (Id) @ 25°C :

1.05A Ta

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

1.05A

Number of Terminations :

3

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.25Ohm

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

152pF @ 16V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Additional Feature :

LOGIC LEVEL COMPATIBLE

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

4 Weeks

Transistor Application :

SWITCHING