BSH112,235

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

LOGIC LEVEL COMPATIBLE

Power Dissipation-Max :

830mW Tc

Series :

TrenchMOS™

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

Terminal Form :

Gull wing

Feedback Cap-Max (Crss) :

10 pF

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G3

Vgs(th) (Max) @ Id :

2V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Published :

1997

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain-source On Resistance-Max :

5Ohm

JEDEC-95 Code :

TO-236AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Number of Terminations :

3

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Vgs (Max) :

±15V

DS Breakdown Voltage-Min :

60V

Terminal Finish :

Matte Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

0.3A

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Pin Count :

3

Drain to Source Voltage (Vdss) :

60V

Number of Elements :

1

JESD-609 Code :

e3

Operating Temperature :

-65°C~150°C TJ