BSH111,215

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Additional Feature :

FAST SWITCHING

Transistor Application :

SWITCHING

Terminal Position :

Dual

Power Dissipation-Max :

830mW Tc

ECCN Code :

EAR99

Series :

TrenchMOS™

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 8V

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

335mA

Rds On (Max) @ Id, Vgs :

4 Ω @ 500mA, 4.5V

HTS Code :

8541.29.00.75

Feedback Cap-Max (Crss) :

10 pF

Surface Mount :

yes

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±10V

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-65°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

55V

Vgs(th) (Max) @ Id :

1.3V @ 1mA

DS Breakdown Voltage-Min :

55V

Terminal Finish :

Tin (Sn)

Published :

1997

RoHS Status :

RoHS Compliant

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

335mA Ta

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Number of Pins :

3

Drain-source On Resistance-Max :

4Ohm

Number of Terminations :

3