BSH105,235

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id :

570mV @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Fall Time (Typ) :

4.5 ns

Additional Feature :

LOGIC LEVEL COMPATIBLE

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

3.9nC @ 4.5V

Factory Lead Time :

4 Weeks

Number of Terminations :

3

Drain-source On Resistance-Max :

0.25Ohm

Terminal Position :

Dual

Max Dual Supply Voltage :

20V

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

20V

Number of Elements :

1

Turn-Off Delay Time :

45 ns

Gate to Source Voltage (Vgs) :

8V

Surface Mount :

yes

Published :

1998

ECCN Code :

EAR99

Element Configuration :

Single

Power Dissipation :

417mW

Input Capacitance (Ciss) (Max) @ Vds :

152pF @ 16V

FET Type :

N-Channel

Turn On Delay Time :

2 ns

Number of Pins :

3

Pin Count :

3

HTS Code :

8541.21.00.95

Mounting Type :

Surface Mount

Power Dissipation-Max :

417mW Ta

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Rise Time :

4.5ns

Current - Continuous Drain (Id) @ 25°C :

1.05A Ta

Vgs (Max) :

±8V

Lead Free :

Lead Free

Continuous Drain Current (ID) :

1.05A

Rds On (Max) @ Id, Vgs :

200m Ω @ 600mA, 4.5V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing