BSO303P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power - Max :

2W

JESD-30 Code :

R-PDSO-G8

Pulsed Drain Current-Max (IDM) :

32.4 A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Elements :

2

Package Shape :

RECTANGULAR

Current - Continuous Drain (Id) @ 25°C :

8.2A

Polarity/Channel Type :

P-Channel

Terminal Finish :

NOT SPECIFIED

DS Breakdown Voltage-Min :

30 V

Mounting Type :

Surface Mount

Series :

OptiMOS™

FET Type :

2 P-Channel (Dual)

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Product Status :

Active

Number of Terminals :

8

Avalanche Energy Rating (Eas) :

97 mJ

Operating Temperature :

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id :

2V @ 100µA

Surface Mount :

yes

Manufacturer :

Rochester Electronics LLC

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Package :

Bulk

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

21mOhm @ 8.2A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

72.5nC @ 10V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

1761pF @ 25V

Drain-source On Resistance-Max :

0.021 Ω

FET Feature :

Logic Level Gate

Drain to Source Voltage (Vdss) :

30V

Pin Count :

8

Reach Compliance Code :

Unknown

Supplier Device Package :

PG-DSO-8

Pbfree Code :

No

Terminal Position :

Dual