BSO330N02KG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Channel Type :

Dual N

Reach Compliance Code :

Compliant

Drain to Source Voltage (Vdss) :

20V

Length :

4.9 mm

Transistor Polarity :

N-Channel

DS Breakdown Voltage-Min :

20 V

Configuration :

Dual

Manufacturer :

Infineon

Supplier Device Package :

PG-DSO-8

Rds On (Max) @ Id, Vgs :

30mOhm @ 6.5A, 4.5V

Number of Terminals :

8

Pin Count :

8

Pulsed Drain Current-Max (IDM) :

26 A

Package / Case :

SOIC-8

Operating Mode :

ENHANCEMENT MODE

Package Shape :

RECTANGULAR

Mounting Style :

SMD/SMT

Width :

3.9 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Terminal Position :

Dual

RoHS :

Details

Gate Charge (Qg) (Max) @ Vgs :

4.9nC @ 4.5V

Product Type :

MOSFET

Brand :

Infineon Technologies

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Vgs(th) (Max) @ Id :

1.2V @ 20µA

Number of Channels :

2 Channel

Avalanche Energy Rating (Eas) :

19 mJ

Minimum Operating Temperature :

- 55 C

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Height :

1.75 mm

Power Dissipation-Max (Abs) :

2.5 W

Maximum Operating Temperature :

+ 150 C

Package :

Bulk

Product Category :

MOSFET

Technology :

Si

Series :

OptiMOS 2

JESD-30 Code :

R-PDSO-G8

Power - Max :

1.4W

Surface Mount :

yes

Subcategory :

MOSFETs

Tradename :

OptiMOS

Rise Time :

16.8 ns

Drain-source On Resistance-Max :

0.03 Ω

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

5.4A

Drain Current-Max (Abs) (ID) :

5.4 A

FET Type :

2 N-Channel (Dual)

Terminal Form :

Gull wing

Channel Mode :

Enhancement

Transistor Type :

2 N-Channel

Packaging :

Cut Tape

Product Status :

Active

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

730pF @ 10V

Operating Temperature :

-55°C ~ 150°C (TJ)

Mounting Type :

Surface Mount