BSO303SPH

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Dual Supply Voltage :

-30V

Series :

OptiMOS™

Power Dissipation :

1.56W

Transistor Element Material :

SILICON

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

17 Weeks

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Position :

Dual

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

97 mJ

Drain to Source Voltage (Vdss) :

30V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Current - Continuous Drain (Id) @ 25°C :

7.2A Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

1.56W Ta

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2330pF @ 25V

Halogen Free :

Halogen Free

Pulsed Drain Current-Max (IDM) :

36A

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 100µA

Lead Free :

Lead Free

Continuous Drain Current (ID) :

7.2A

Contact Plating :

Tin

ECCN Code :

EAR99

Rise Time :

11ns

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Qualification Status :

Not Qualified

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Rds On (Max) @ Id, Vgs :

21m Ω @ 9.1A, 10V

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

Published :

2011