BSO330N02KGFUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

Number of Terminations :

8

Turn On Delay Time :

7.4 ns

Avalanche Energy Rating (Eas) :

19 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

8

Drain-source On Resistance-Max :

0.03Ohm

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

4.9nC @ 4.5V

Continuous Drain Current (ID) :

5.4A

Published :

2008

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Pin Count :

8

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

30m Ω @ 6.5A, 4.5V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

20V

Terminal Form :

Gull wing

Turn-Off Delay Time :

13.4 ns

Input Capacitance (Ciss) (Max) @ Vds :

730pF @ 10V

ECCN Code :

EAR99

Max Power Dissipation :

1.4W

Vgs(th) (Max) @ Id :

1.2V @ 20µA

Gate to Source Voltage (Vgs) :

12V

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 N-Channel (Dual)

Power Dissipation :

2.5W

Number of Elements :

2

Fall Time (Typ) :

2.8 ns

Base Part Number :

BSO330N02

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Pbfree Code :

yes

Rise Time :

16.8ns