BSO303PNTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2V @ 100µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Turn On Delay Time :

10.6 ns

Gate Charge (Qg) (Max) @ Vgs :

72.5nC @ 10V

Radiation Hardening :

No

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

21m Ω @ 8.2A, 10V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

2 P-Channel (Dual)

Avalanche Energy Rating (Eas) :

97 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1761pF @ 25V

Turn-Off Delay Time :

55.4 ns

Power Dissipation :

2W

Number of Terminations :

8

FET Feature :

Logic Level Gate

Terminal Form :

Gull wing

Lead Free :

Contains Lead

Series :

OptiMOS™

Mount :

Surface Mount

Fall Time (Typ) :

39.3 ns

Published :

2008

DS Breakdown Voltage-Min :

30V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

2

Rise Time :

12.9ns

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Max Power Dissipation :

2W

Continuous Drain Current (ID) :

8.2A

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE